專題文章 : 2024年1月份Mini-Circuits新產品發佈-Amplifiers & Mixers & Switches

PMA5-83-2W+

Power Amplifier

50 Ω 0.01 to 10 GHz 2 W PSAT

• P1dB, Typ. +31 dBm

• PSAT, Typ. +33 dBm

• Low Noise Figure, Typ. 3.5 dB

• High OIP3, Typ. +43.5 dBm

• Supply Voltage +12 V, 400 mA

• 5x5 mm 32-Lead QFN-Style Package

 

APPLICATIONS

• Test and Measurement Equipment

• Radar, EW, and ECM Defense Systems

• 5G Sub6, MIMO Wireless Infrastructure Systems

• Microwave Radio & VSAT

SMIQ-1844H+

IQ Mixer

50Ω Level 18 (LO Power +18 dBm) 18 to 40 GHz

• Wideband RF & LO, 18 to 40 GHz

• Wideband IF, DC to 7 GHz

• Excellent Image Rejection, Typ. 30 dB

• High LO-RF Isolation, Typ. 38 dB

• High Input IP3, Typ. +31 dBm

• Usable as Image Reject Mixer & SSB Converter

• 4x4 mm, 24-Lead QFN-Style Package

 

APPLICATIONS

• Test and Measurement Equipment

• 5G mmWave and Back Haul Radio

• Satellite Communications

• Radar, EW, and ECM Defense Systems

SMIQ-1844H-DG+

IQ Mixer

50Ω 18 to 43.5 GHz Level 18 (LO Power +18 dBm)

• Wideband RF & LO, 18 to 43.5 GHz

• Wideband IF, DC to 7 GHz

• Excellent Image Rejection, Typ. 30 dB

• High LO-RF Isolation, Typ. 38 dB

• High Input IP3, Typ. +31 dBm

• Usable as Image Reject Mixer & SSB Converter

 

APPLICATIONS

• Test and Measurement Equipment

• 5G mmWave and Back Haul Radio

• Satellite Communications

• Radar, EW, and ECM Defense Systems

Quantity,          Package                                  Model No.

Gel -                 Pak: 5, 10, 50 KGD*                 SMIQ-1844H-DG+

Medium†,        Partial wafer: KGD*<440       SMIQ-1844H-DP+

Full wafer†                                                        SMIQ-1844H-DF+

M3SWA2-34DR+

SPDT RF Switch

50 Ω DC to 30 GHz Absorptive RF Switch with Internal Driver

• Wideband, DC to 30 GHz

• Low Insertion Loss, Typ. 1.0 dB

• High Isolation, Typ. 65 dB

• High Input IP3, Typ. +48 dBm

• Fast Rise/Fall Time, Typ. 6.9 ns/7.1 ns

• 3x3 mm, 16-Lead QFN-Style Package

 

APPLICATIONS

• Radar, EW and ECM Defense Systems

• Communication Infrastructure

• Test and Measurement

M3SWA2-34DR-DG+

SPDT RF Switch

50Ω DC to 30 GHz Absorptive RF Switch with Internal Driver

• Wideband, DC to 30 GHz

• Low Insertion Loss, Typ. 1.1 dB

• High Isolation RF1-RF2, Typ. 67 dB

• High Input IP3, Typ. +48 dBm

• Fast Rise/Fall Time, Typ. 6.9 ns/7.1 ns

 

APPLICATIONS

• Radar, EW and ECM Defense Systems

• Communication Infrastructure

• Test and Measurements

Quantity,                 Package                                     Model No.

Gel -                       Pak: 5, 10, 50, or 100 KGD*      M3SWA2-34DR-DG+

Medium†,             Partial wafer: KGD* <729         M3SWA2-34DR-DP+

Full wafer†                                                                M3SWA2-34DR-DF+

TTL-1SP8T-183

Solid-State Switch

50Ω 0.1 to 18 GHz SP8T SMA female

• Fast-switching, absorptive solid-state SP8T

• 100 ns switching time with no control delays

• TTL for simple control integration

• Low insertion loss

 

APPLICATIONS

• RF signal routing / switch matrices

• 5G FR1, WiFi 6E, UWB, Bluetooth

• Military radio, radar & electronic warfare

• Microwave radio / cellular infrastructure

• Test & measurement systems


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