TAV2-14LN+ E-PHEMT Transistor 50Ω 0.05 to 10 GHz • Low Noise Figure, 0.6 dB typ. at 6 GHz, 2V • High Gain, 16.4 dB typ. at 6 GHz, 4V • High OIP3, +30.9 dBm typ. at 6 GHz, 4V • High P1dB, 18.8 dBm typ. at 6 GHz, 4V • External biasing and matching required • Usable to 12 GHz 
TAV2-14LN-D+ E-PHEMT Transistor Die 50Ω 0.05 to 10 GHz • Low Noise Figure, 0.6 dB typ. at 6 GHz, 2V • High Gain, 16.4 dB typ. at 6 GHz, 4V • High OIP3, +30.9 dBm typ. at 6 GHz, 4V • High P1dB, 18.8 dBm typ. at 6 GHz, 4V • External biasing and matching required • Usable to 12 GHz 
SYBDC-26-52VHP+ Bi-Directional Coupler 50Ω 26 dB Coupling 30 to 540 MHz 50 Watt • High power handling, 50 W • Low mainline loss, 0.12 dB typ. • High directivity, 24 dB typ. • Excellent VSWR, 1.12:1 typ. • High power, 50W max with output load VSWR 2.0 max. • High power, 30W max. with output open or short 
HK-PT54-D+ Power Tap Die 50Ω 26.5 dB DC to 50 GHz • Ultra-Wide Bandwidth, DC to 50 GHz • Excellent Coupling Flatness 26.5±1.4 dB typ. • Excellent VSWR, 1.2:1 typ. • Wide bandwidth, DC to 50 GHz 
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